document number: 83645 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 20-dec-07 1 optocoupler, phototransistor output, dual channel ilct6/mct6 vishay semiconductors description the ilct6/mct6 is a two c hannel optocoupler for high density applications. each ch annel consists of an optically coupled pair with a gallium arsenide infrared led and a silicon npn phototransistor. si gnal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the ilct6/mct6 is especia lly designed for driving medium-speed logic, where it may be used to eliminate troublesome ground loop and noise problems. it can also be used to replace relays and transformers in many digital interface applications, as well as analog applications such as crt modulation. features ? current transfer ratio, 50 % typical ? leakage current, 1.0 na typical ? two isolated channels per package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-2 (vde 0884)/din en 60747-5-5 pending available with option 1 ? csa 93751 ? bsi iec 60950; iec 60065 note for additional information on the availabl e options refer to option information. i179016 1 2 3 4 8 7 6 5 e c c e a c c a order information part remarks ilct6 ctr 20 %, dip-8 mct6 ctr 20 %, dip-8 ilct6-x007 ctr 20 %, smd-8 (option 7) ilct6-x009 ctr 20 %, smd-8 (option 9) mct6-x007 ctr 20 %, smd-8 (option 7) MCT6-X009 ctr 20 %, smd-8 (option 9)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83645 2 rev. 1.5, 20-dec-07 ilct6/mct6 vishay semiconductors optocoupler, phototransistor output, dual channel note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time c an adversely affect reliability. note t amb = 25 c, unless otherwise specified. minimum and maximum values are testing requi rements. typical values ar e characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. absolute maximum ratings parameter test condition symbol value unit input rated forward current, dc 60 ma peak forward current, dc 1.0 s pulse, 300 pps i fm 3.0 a power dissipation p diss 100 mw derate linearly from 25 c 1.3 mw/c output collector current i c 30 ma collector emitter breakdown voltage bv ceo 30 v power dissipation p diss 150 mw derate linearly from 25 c 2.0 mw/c coupler isolation test voltage v iso 5300 v rms isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 creepage distance 7.0 mm clearance distance 7.0 mm total package dissipation p tot 400 mw derate linearly from 25 c 5.33 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 s electrical characteristics parameter test condition symbol min. typ. max. unit input forward voltage i f = 20 ma v f 1.25 1.50 v reverse current v r = 3.0 v i r 0.1 10 a junction capacitance v f = 0 v c j 25 pf output collector emitter breakdown voltage i c = 1.0 a, i e = 10 a bv ceo 30 65 v emitter collector breakdown voltage i c = 10 a, i e = 10 a bv eco 7.0 10 v collector emitter leakage current v ce = 10 v i ceo 1.0 100 na collector emitter capacitance v ce = 0 v c ce 8.0 pf coupler saturation voltage, collector emitter i c = 2.0 ma, i f = 16 ma v cesat 0.40 v capacitance (input to output) f = 1.0 mhz c io 0.5 pf capacitance between channels f = 1.0 mhz 0.4 pf bandwidth i c = 2.0 ma, v cc = 10 v, r l = 100 150 khz
document number: 83645 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 20-dec-07 3 ilct6/mct6 optocoupler, photot ransistor output, dual channel vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - forward voltage vs. forward current fig. 2 - normalized non-saturated and saturated ctr vs. led current fig. 3 - normalized non-saturated and saturated ctr vs. led current fig. 4 - normalized non-saturated and saturated ctr vs. led current current transfer ratio parameter test condition symbol min. typ. max. unit dc current transfer ratio i f = 10 ma, v ce = 10 v ctr dc 20 50 % switching characteristics parameter test condition symbol min. typ. max. unit switching times, output transistor i c = 2.0 ma, r e = 100 , v ce = 10 v t on , t off 3.0 s iilct6_01 i f - for w ard c u rrent (ma) 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1. 3 1.4 v f - for w ard v oltage ( v ) t am b = - 55 c t am b = 25 c t am b = 8 5 c iilct6_02 100 10 1 0.1 0.0 0.5 1.0 1.5 n ctr(sat) n ctr i f - led c u rrent (ma) n ctr - n ormalized ctr n ormalized to: v ce = 10 v ,i f = 10 ma t am b = 25 c ctr ce(sat) v ce = 0.4 v iilct6_03 100 10 1 0.1 0.0 0.5 1.0 1.5 n ctr(sat) n ctr i f - led c u rrent (ma) n ctr - n ormalized ctr n ormalized to: v ce = 10 v ,i f = 10 ma, t a = 25 c t a = 50 c ctrce(sat) v ce = 0.4 v iilct6_04 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr(sat) n ctr n ormalized to: v ce = 10 v ,i f = 10 ma t am b = 25 c ctr ce(sat) v ce = 0.4 v t am b = 70 c n ctr - n ormalized ctr
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83645 4 rev. 1.5, 20-dec-07 ilct6/mct6 vishay semiconductors optocoupler, phototransistor output, dual channel fig. 5 - normalized non-saturated and saturated ctr vs. led current fig. 6 - collector emitter curre nt vs. temperature and led current fig. 7 - collector emitter leakage current vs.temperature fig. 8 - propagation delay vs. collector load resistor fig. 9 - switching timing fig. 10 - switching schematic iilct6_05 0.1 1 10 100 1.5 1.0 0.5 0.0 i f - led c u rrent (ma) n ctr - n ormalized ctr n ctr(sat) n ctr n ormalized to: v ce = 10 v ,i f = 10 ma, t am b = 25 c ctr ce(sat) v ce = 0.4 v t am b = 8 5 c iilct6_06 60 50 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 8 5 c i f - led c u rrent (ma) i ce - collector c u rrent (ma) 25 c 40 iilct6_07 100 8 0 60 40 20 0 - 20 10 10 10 10 10 10 10 10 - 2 - 1 0 1 2 3 4 5 t am b - am b ient temperat u re (c) i ceo - collector emitter (na) v ce = 10 v typical iilct6_0 8 r l - collector load resistor (k ) 100 10 1 0.1 1 10 100 1000 1.0 1.5 2.0 2.5 t plh t phl t plh - propagation ( s) t phl - propagation delay ( s) t am b = 25 c, i f = 10 ma v cc = 5 v , v th = 1.5 v iilct6_09 t d t r 50 % phl t plh t s t f t i f v o iilct6_10 f = 10 khz, d f = 50 % i f = 10 ma v cc = 5 v r l = 75 v o
document number: 83645 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 20-dec-07 5 ilct6/mct6 optocoupler, photot ransistor output, dual channel vishay semiconductors package dimensions in inches (millimeters) i17 8 006 pin one id 0.255 (6.4 8 ) 0.26 8 (6. 8 1) 0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 4 typ. 0.100 (2.54) typ. 10 3 to 9 0.300 (7.62) typ. 0.01 8 (0.46) 0.022 (0.56) 0.00 8 (0.20) 0.012 (0.30) 0.110 (2.79) 0.130 (3.30) 0.130 (3.30) 0.150 (3. 8 1) 0.020 (0.51) 0.035 (0. 8 9) 0.230 (5. 8 4) 0.250 (6.35) 4 3 2 1 0.031 (0.79) 0.050 (1.27) 5 6 7 8 iso method a 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) min. option 7 1 8 494 min. 0.315 ( 8 .00) 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03) 0.012 (0.30) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83645 6 rev. 1.5, 20-dec-07 ilct6/mct6 vishay semiconductors optocoupler, phototransistor output, dual channel ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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